Fabrication of a far-infrared photodetector based on InAs/GaAs quantum-dot superlattices
Identifieur interne : 00C779 ( Main/Repository ); précédent : 00C778; suivant : 00C780Fabrication of a far-infrared photodetector based on InAs/GaAs quantum-dot superlattices
Auteurs : RBID : Pascal:03-0016847Descripteurs français
- Pascal (Inist)
- 0757K, 8560G, 7867H, 7363K, 7830F, 8107T, 8115H, 8535B, Appareillage, Etude expérimentale, Indium composé, Gallium arséniure, Semiconducteur III-V, Autoassemblage, Point quantique semiconducteur, Superréseau semiconducteur, Spectre transformée Fourier, Spectre IR, Détecteur IR, Photodétecteur, Fabrication optique, Epitaxie jet moléculaire, Croissance semiconducteur.
English descriptors
- KwdEn :
- Experimental study, Fourier transform spectra, Gallium arsenides, III-V semiconductors, Indium compounds, Infrared detectors, Infrared spectra, Instrumentation, Molecular beam epitaxy, Optical fabrication, Photodetectors, Self-assembly, Semiconductor growth, Semiconductor quantum dots, Semiconductor superlattices.
Abstract
A far-infrared photodetector based on twenty layers of self-assembled InAs/GaAs quantum dot superlattices is fabricated. Measurements by Fourier-transform infrared spectroscopy at 77 K reveal that the response of the device is in the range of 9 to 16.3 μm, with a peak absorption wavelength near 13.2 μm (756 cm-1). The electrical characteristic of the devices current-voltage response is 63 μA at -1-V bias voltage when a 1-cd light source is at 15-cm distance. © 2003 Society of Photo-Optical Instrumentation Engineers.
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(Taïwan)</country><wicri:regionArea>Cheng Shun Institute of Science and Technology, Material Research and Development Center, Tao-Yuan 325</wicri:regionArea><wicri:noRegion>Tao-Yuan 325</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Ming-Hsin Univeristy of Science and Technology, Department of Electronic Engineering, Hsin-Fong, Hsin-Chu 304, Taiwan</s1></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Ming-Hsin Univeristy of Science and Technology, Department of Electronic Engineering, Hsin-Fong, Hsin-Chu 304</wicri:regionArea><wicri:noRegion>Hsin-Chu 304</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Cheng Shun Institute of Science and Technology, Material Research and Development Center, Tao-Yuan 325, Taiwan</s1></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Cheng Shun Institute of Science and Technology, Material Research and Development Center, Tao-Yuan 325</wicri:regionArea><wicri:noRegion>Tao-Yuan 325</wicri:noRegion></affiliation></author><author><name sortKey="Yang, San Te Ching Ming" uniqKey="Yang S">San-Te Ching-Ming Yang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ming-Hsin University of Science and Technology, Department of Electronic Engineering, Hsin-Fong, Hsin-Chu 304, Taiwan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Ming-Hsin University of Science and Technology, Department of Electronic Engineering, Hsin-Fong, Hsin-Chu 304</wicri:regionArea><wicri:noRegion>Hsin-Chu 304</wicri:noRegion></affiliation></author><author><name sortKey="Yang, Jyh Neng" uniqKey="Yang J">Jyh-Neng Yang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ming-Hsin University of Science and Technology, Department of Electronic Engineering, Hsin-Fong, Hsin-Chu 304, Taiwan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Ming-Hsin University of Science and Technology, Department of Electronic Engineering, Hsin-Fong, Hsin-Chu 304</wicri:regionArea><wicri:noRegion>Hsin-Chu 304</wicri:noRegion></affiliation></author><author><name sortKey="Lan, Wen How" uniqKey="Lan W">Wen-How Lan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ming-Hsin University of Science and Technology, Department of Electronic Engineering, Hsin-Fong, Hsin-Chu 304, Taiwan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Ming-Hsin University of Science and Technology, Department of Electronic Engineering, Hsin-Fong, Hsin-Chu 304</wicri:regionArea><wicri:noRegion>Hsin-Chu 304</wicri:noRegion></affiliation></author><author><name sortKey="Chang, Liann Be" uniqKey="Chang L">Liann-Be Chang</name></author><author><name sortKey="Hsieh, Li Zen" uniqKey="Hsieh L">Li-Zen Hsieh</name></author></titleStmt><publicationStmt><idno type="inist">03-0016847</idno><date when="2003-01">2003-01</date><idno type="stanalyst">PASCAL 03-0016847 AIP</idno><idno type="RBID">Pascal:03-0016847</idno><idno type="wicri:Area/Main/Corpus">00E098</idno><idno type="wicri:Area/Main/Repository">00C779</idno></publicationStmt><seriesStmt><idno type="ISSN">0091-3286</idno><title level="j" type="abbreviated">Opt. eng.</title><title level="j" type="main">Optical engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Fourier transform spectra</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Infrared detectors</term><term>Infrared spectra</term><term>Instrumentation</term><term>Molecular beam epitaxy</term><term>Optical fabrication</term><term>Photodetectors</term><term>Self-assembly</term><term>Semiconductor growth</term><term>Semiconductor quantum dots</term><term>Semiconductor superlattices</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>0757K</term><term>8560G</term><term>7867H</term><term>7363K</term><term>7830F</term><term>8107T</term><term>8115H</term><term>8535B</term><term>Appareillage</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Autoassemblage</term><term>Point quantique semiconducteur</term><term>Superréseau semiconducteur</term><term>Spectre transformée Fourier</term><term>Spectre IR</term><term>Détecteur IR</term><term>Photodétecteur</term><term>Fabrication optique</term><term>Epitaxie jet moléculaire</term><term>Croissance semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A far-infrared photodetector based on twenty layers of self-assembled InAs/GaAs quantum dot superlattices is fabricated. Measurements by Fourier-transform infrared spectroscopy at 77 K reveal that the response of the device is in the range of 9 to 16.3 μm, with a peak absorption wavelength near 13.2 μm (756 cm-1). The electrical characteristic of the devices current-voltage response is 63 μA at -1-V bias voltage when a 1-cd light source is at 15-cm distance. © 2003 Society of Photo-Optical Instrumentation Engineers.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0091-3286</s0></fA01><fA02 i1="01"><s0>OPEGAR</s0></fA02><fA03 i2="1"><s0>Opt. eng.</s0></fA03><fA05><s2>42</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Fabrication of a far-infrared photodetector based on InAs/GaAs quantum-dot superlattices</s1></fA08><fA11 i1="01" i2="1"><s1>CHENG (Yi-Chang)</s1></fA11><fA11 i1="02" i2="1"><s1>YANG (San-Te (Ching-Ming))</s1></fA11><fA11 i1="03" i2="1"><s1>YANG (Jyh-Neng)</s1></fA11><fA11 i1="04" i2="1"><s1>LAN (Wen-How)</s1></fA11><fA11 i1="05" i2="1"><s1>CHANG (Liann-Be)</s1></fA11><fA11 i1="06" i2="1"><s1>HSIEH (Li-Zen)</s1></fA11><fA14 i1="01"><s1>Ming-Hsin University of Science and Technology, Department of Electronic Engineering, Hsin-Fong, Hsin-Chu 304, Taiwan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Cheng Shun Institute of Science and Technology, Material Research and Development Center, Tao-Yuan 325, Taiwan</s1></fA14><fA14 i1="03"><s1>Ming-Hsin Univeristy of Science and Technology, Department of Electronic Engineering, Hsin-Fong, Hsin-Chu 304, Taiwan</s1></fA14><fA14 i1="04"><s1>Cheng Shun Institute of Science and Technology, Material Research and Development Center, Tao-Yuan 325, Taiwan</s1></fA14><fA14 i1="05"><s1>Chung Cheng Institute of Technology, Department of Electrical Engineering, Tao-Yuan 325, Taiwan</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>119-123</s1></fA20><fA21><s1>2003-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>15166</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0016847</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Optical engineering</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>A far-infrared photodetector based on twenty layers of self-assembled InAs/GaAs quantum dot superlattices is fabricated. Measurements by Fourier-transform infrared spectroscopy at 77 K reveal that the response of the device is in the range of 9 to 16.3 μm, with a peak absorption wavelength near 13.2 μm (756 cm-1). 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